Electronic Chemical Business Unit

Ultra High Purity Process Chemicals for Semiconductor/FPD Industries
Sulfuric acid, hydrogen peroxide, ammonia water, hydrochloric acid
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In recent years, the demand is increasing for high quality removal of particles and metals from small size semiconductor circuits during silicon wafer cleaning process. Star Series meets those demands with semiconductor process chemicals having metal impurity levels below 10ppt.
Business items: EL hydrochloric acid, EL nitric acid, EL ammonia water

Characteristics
In order to achieve ultra-high purity with the semiconductor wafer free from inorganic and organic residues, the following properties are required;
  • Particle removal
  • Removal of organic residues
  • Removal of metal residues

Our chemical products meet those requirements and provide high performance for the semiconductor and flat panel industries.

Lineup
  • EL sulfuric acid
  • EL hydrogen peroxide
  • EL ammonia
  • EL hydrochloric acid
Four features of Star Series
  • Providing high-quality products for over 30 years
  • Improving quality in collaboration with major semiconductor companies
  • Adaptation to miniaturization of semiconductor circuits
  • High-performance quality control in comprehensive chemical company

Advanced Cleaning Solutions
AM1
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Characteristics
AM1 is a high-performance alternative RCA cleaning solution applicable to both batch and single wafer cleaning. It substantially improves metal and particle removal characteristics. In addition, it can be applied in damage-sensitive metal-gate processes.

AM1 is an electronic chemical solution featuring innovative improvement in the removal of particles from the wafer surface, no attack of silicon, and metal impurity removal capability. In other words, two steps of the RCA clean batch process --- particle removal and metal impurity removal --- can be performed at the same time. As a result, the cleaning process can be simplified.
  • For single wafer processing, superior surface cleanliness is achieved in a short time.
  • In metal gate cleaning, corrosion of tungsten and silicon is prevented.
MC1
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Characteristics
MC1 is an electronics chemical that is used as a high-performance alternative RCA clean for silicon wafers and the like. It has the capability to remove both particles and metals.

MC1 is an electronic chemical which can remove both particles and metal impurities from the wafer surface. That is, it can simultaneously perform two RCA clean functions, namely the SC-1 clean`s particle removal and the SC-2 clean`s metal impurity removal. As a result, cross contamination is eliminated, the number of RCA clean steps is reduced, and the cleaning solution lifetime is extended. Therefore a reduction in total processing cost can be achieved.
  • Reduction of metal contamination
  • Prevention of cross contamination

Post Cu/Low-k CMP Cleaning Solution, "MCX-SDR4"
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Characteristics
After polishing Cu/Low-k film by CMP, the film is left with inorganic and organic residues. Therefore, the following properties are required in order to achieve high purity by post CMP cleaning.
  • Particle removal
  • Removal of organic residues
  • Removal of metal residues
  • Limit Cu corrosion
  • Limit side reactions
  • Hydrophilic treatment on substrate

Our product meets those requirements and provides high performance for the semiconductor industry.


Si Etchant Series
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Si Etchant Series is a silicon wafer etching acid for spin etching processer that eliminates damaged process layers from wafer surfaces.

Characteristics
Si Etchant Series is a silicon wafer etching acid for spin etching processer. It is ideal for eliminating damaged process layers from wafer surfaces and for processing mirrored or rough surfaces.

Applications
Back side etching process, Elimination of damaged process layers, Uniformity, Stress release mirror etching, and roughness etching.
Wet etching, spin etching devices, single wafer wet processors, dedicated devices for auto supplying highly pure chemicals for semiconductor processes.
1. Mirrored surface processing acids
  • Si etch E Etch rate: 25µm/min.
  • Si etch F Etch rate: 20µm/min.
  • Si etch J Etch rate: 8µm/min.
2. Mirrored surface finishing acid
  • MH-3 Etch rate: 10µm/min.
3. Rough surface processing acids
  • Si etch C Etch rate: 3µm/min.
  • Si etch D Etch rate: 2µm/min.
Job overview